The effects of annealing and nitrogen as a diluting gas on the electromigration resistance of deposited copper film were also investigated. 考察了沉积后退火以及氮气作为稀释气体对沉积的铜薄膜抗电迁移率的影响。
Thin film manganin gages and ytterbium gages were fabricated by magnetron sputtering.Meanwhile, ytterbium gages were prepared by vacuum evaporation. 摘要采用磁控溅射法制备锰铜薄膜,溅射和真空蒸发法制备镱薄膜。