Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate. 在半导体器件制造的外延工艺中,外延生长时通常要掺入杂质。
The interface between the layer and the substructure was epitaxial, with excellent bonding by the strong metallurgical interface. 涂层与基材之间呈典型的外延生长界面,形成了良好的冶金结合。